Athermal Annealing of Mg-implanted GaAs
High-resolution X-ray diffraction scans and electrical resistivity measurements were performed on Mg-implanted GaAs exposed to laser shock annealing on both the implanted and the unimplanted surfaces of the wafer. Measurements on the sample that was subjected to a laser pulse exposure on the implanted side indicate that annealing had occurred within 3 mm of the center of the laser-exposed spot. X-ray scans and the topographs indicate the propagation of a mechanical wave propagating in the...[Show more]
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|Source:||Applied Physics A: Materials Science and Processing|
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