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Athermal Annealing of Mg-implanted GaAs

Simonson, J; Qadri, S B; Rao, Mulpuri V; Fischer, R; Grun, J; Ridgway, Mark C

Description

High-resolution X-ray diffraction scans and electrical resistivity measurements were performed on Mg-implanted GaAs exposed to laser shock annealing on both the implanted and the unimplanted surfaces of the wafer. Measurements on the sample that was subjected to a laser pulse exposure on the implanted side indicate that annealing had occurred within 3 mm of the center of the laser-exposed spot. X-ray scans and the topographs indicate the propagation of a mechanical wave propagating in the...[Show more]

dc.contributor.authorSimonson, J
dc.contributor.authorQadri, S B
dc.contributor.authorRao, Mulpuri V
dc.contributor.authorFischer, R
dc.contributor.authorGrun, J
dc.contributor.authorRidgway, Mark C
dc.date.accessioned2015-12-13T22:51:35Z
dc.identifier.issn0947-8396
dc.identifier.urihttp://hdl.handle.net/1885/81152
dc.description.abstractHigh-resolution X-ray diffraction scans and electrical resistivity measurements were performed on Mg-implanted GaAs exposed to laser shock annealing on both the implanted and the unimplanted surfaces of the wafer. Measurements on the sample that was subjected to a laser pulse exposure on the implanted side indicate that annealing had occurred within 3 mm of the center of the laser-exposed spot. X-ray scans and the topographs indicate the propagation of a mechanical wave propagating in the radial direction from the laser-exposed spot. No evidence of annealing, however, was observed at any position on the Mg-implanted GaAs sample that was subjected to a laser pulse exposure on the unimplanted side. The Mg implant did not show any redistribution for the laser-shocked annealing, in contrast to the conventional rapid thermal annealing.
dc.publisherSpringer
dc.sourceApplied Physics A: Materials Science and Processing
dc.subjectKeywords: Electric conductivity; Ion implantation; Laser pulses; Rapid thermal annealing; Scanning electron microscopy; Semiconductor materials; Vaporization; Wave propagation; X ray diffraction analysis; Dopants; Laser-plasma interaction; Laser-shocked annealing;
dc.titleAthermal Annealing of Mg-implanted GaAs
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume81
dc.date.issued2005
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub9503
local.type.statusPublished Version
local.contributor.affiliationSimonson, J, George Mason University
local.contributor.affiliationQadri, S B, US Navy
local.contributor.affiliationRao, Mulpuri V, George Mason University
local.contributor.affiliationFischer, R, US Navy
local.contributor.affiliationGrun, J, US Navy
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, ANU
local.description.embargo2037-12-31
local.bibliographicCitation.startpage601
local.bibliographicCitation.lastpage605
local.identifier.doi10.1007/s00339-004-2995-1
dc.date.updated2015-12-11T10:46:02Z
local.identifier.scopusID2-s2.0-21644466422
CollectionsANU Research Publications

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