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Athermal Annealing of Mg-implanted GaAs

Simonson, J; Qadri, S B; Rao, Mulpuri V; Fischer, R; Grun, J; Ridgway, Mark C

Description

High-resolution X-ray diffraction scans and electrical resistivity measurements were performed on Mg-implanted GaAs exposed to laser shock annealing on both the implanted and the unimplanted surfaces of the wafer. Measurements on the sample that was subjected to a laser pulse exposure on the implanted side indicate that annealing had occurred within 3 mm of the center of the laser-exposed spot. X-ray scans and the topographs indicate the propagation of a mechanical wave propagating in the...[Show more]

CollectionsANU Research Publications
Date published: 2005
Type: Journal article
URI: http://hdl.handle.net/1885/81152
Source: Applied Physics A: Materials Science and Processing
DOI: 10.1007/s00339-004-2995-1

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