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Dynamic Annealing in III-Nitrides Under Ion Bombardment

Kucheyev, Sergei; Williams, James; Zou, Jin; Jagadish, Chennupati


The damage buildup behavior in AlxGa1-xN films bombarded with kilo-electron-volt heavy ions at 77 and 300 K was studied. Rutherford backscattering/channeling spectrometry and cross-sectional transmission electron microscopy were used for the study. It was found that the damage buildup behavior at 300 K was essentially similar for all the AlGaN films studied. The results show that an increase in Al content changes the main features of the amorphization behavior and strongly enhances dynamic...[Show more]

CollectionsANU Research Publications
Date published: 2004
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.1649459


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