Characterisation of molecular nitrogen in ion-bombarded compound semiconductors by synchrotron-based absorption and emission spectroscopies
We have studied formation of molecular nitrogen under low-energy nitrogen bombardment in a range of compound semiconductors by synchrotron-based X-ray photoelectron spectroscopy (XPS) around N 1s core-level and near-edge X-ray absorption fine structure (NEXAFS) around N K-edge. We have found interstitial molecular nitrogen, N2, in all samples under consideration. The presence of N2 produces a sharp resonance in low-resolution NEXAFS spectra at around 400.8 eV, showing the characteristic...[Show more]
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