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Impact of nickel contamination on carrier recombination in n- and p-type crystalline silicon wafers

MacDonald, Daniel


The effect of Ni surface contamination on carrier recombination after high temperature processing of crystalline silicon wafers has been studied for a range of n- and p-type resistivities. The results suggest that the presence of Ni precipitates at the wafer surfaces, formed during cooling, dominate the measured lifetimes. These precipitates exhibit a greater impact on the low-injection lifetime in p-type samples than in n-type. In addition, the injection-dependent lifetime curves for the...[Show more]

CollectionsANU Research Publications
Date published: 2005
Type: Journal article
Source: Applied Physics A: Materials Science and Processing
DOI: 10.1007/s00339-005-3371-5


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