Open-circuit voltage quantum efficiency technique for defect spectroscopy in semiconductors
The temperature-dependent quantum efficiency of the open-circuit voltage is introduced for defect characterization in semiconductors. This technique measures the spectral response of the open-circuit voltage of a diode at different temperatures. The diffusion length is extracted from the spectral photovoltage and converted into carrier lifetime. This results in temperature-dependent lifetime curves that can be analyzed with the Shockley-Read-Hall model. The method allows defect analysis to be...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Mackel_Open-circuit_voltage_quantum_2005.pdf||77.19 kB||Adobe PDF||Request a copy|
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