Mackel, Helmut; Cuevas, Andres
The temperature-dependent quantum efficiency of the open-circuit voltage is introduced for defect characterization in semiconductors. This technique measures the spectral response of the open-circuit voltage of a diode at different temperatures. The diffusion length is extracted from the spectral photovoltage and converted into carrier lifetime. This results in temperature-dependent lifetime curves that can be analyzed with the Shockley-Read-Hall model. The method allows defect analysis to be...[Show more]
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