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InAs Quantum Dots Grown on InGaAs Buffer Layers by Metal-Organic Chemical Vapor Deposition

Stewart Sears, Kalista; Wong-Leung, Jennifer; Jagadish, Chennupati; Tan, Hark Hoe


InAs quantum dots were deposited onto GaAs or onto a thin (nominally 7 ML) InxGa1-xAs layer (x=0.075 or 0.15) by metal-organic chemical vapor deposition and compared using photoluminescence measurements, plan-view transmission electron microscopy (TEM) and atomic force microscopy (AFM). The photoluminescence intensity was considerably reduced for samples grown using an InGaAs buffer layer. This is correlated with the formation of dislocations (density=1.5(±1)×108cm-2) making them unsuitable for...[Show more]

CollectionsANU Research Publications
Date published: 2005
Type: Journal article
Source: Journal of Crystal Growth
DOI: 10.1016/j.jcrysgro.2005.04.043


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