Study of Intermixing in InGaAs/(Al)GaAs Quantum Well and Quantum Dot Structures for Optoelectronic/Photonic Integration
Two of the most important intermixing techniques, ion implantation and impurity free vacancy disordering, are investigated and compared in InGaAs/(Al)GaAs quantum well (QW) and quantum dot (QD) structures. For ion implantation induced intermixing, arsenic implantation was performed and the amount of interdiffusion created was found to vary as a function of implantation dose and temperature. Impurity free vacancy disordering was also enhanced by deposition of SiO2 in both QW and QD structures...[Show more]
|Collections||ANU Research Publications|
|Source:||IEE Proceedings - Circuits, Devices and Systems|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.