Skip navigation
Skip navigation

Study of Intermixing in InGaAs/(Al)GaAs Quantum Well and Quantum Dot Structures for Optoelectronic/Photonic Integration

Fu, Lan; Lever McGowan, Penelope; Tan, Hoe Hark; Jagadish, Chennupati; Reece, Peter; Gal, Michael


Two of the most important intermixing techniques, ion implantation and impurity free vacancy disordering, are investigated and compared in InGaAs/(Al)GaAs quantum well (QW) and quantum dot (QD) structures. For ion implantation induced intermixing, arsenic implantation was performed and the amount of interdiffusion created was found to vary as a function of implantation dose and temperature. Impurity free vacancy disordering was also enhanced by deposition of SiO2 in both QW and QD structures...[Show more]

CollectionsANU Research Publications
Date published: 2005
Type: Journal article
Source: IEE Proceedings - Circuits, Devices and Systems
DOI: 10.1049/ip-cds:20045053


There are no files associated with this item.

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator