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Critical thickness for InAs quantum dot formation on (3 1 1)B InP substrates

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Caroff, Philippe; Bertru, N; Lu, W; Elias, G; Dehaese, O; Letoublon, A; Le Corre, A

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We report on the critical thickness for InAs quantum dot (QD) formation on (3 1 1)B InP substrates. Firstly, critical thicknesses for InAs QD formation on InP surfaces have been measured by reflection high-energy electron diffraction. Large change of the

CollectionsANU Research Publications
Date published: 2009
Type: Journal article
URI: http://hdl.handle.net/1885/79888
Source: Journal of Crystal Growth
DOI: 10.1016/j.jcrysgro.2009.02.048

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