Critical thickness for InAs quantum dot formation on (3 1 1)B InP substrates
We report on the critical thickness for InAs quantum dot (QD) formation on (3 1 1)B InP substrates. Firstly, critical thicknesses for InAs QD formation on InP surfaces have been measured by reflection high-energy electron diffraction. Large change of the
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|Source:||Journal of Crystal Growth|
|01_Caroff_Critical_thickness_for_InAs_2009.pdf||199.82 kB||Adobe PDF||Request a copy|
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