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Thickness-dependent Stress in Plasma-deposited Silicon Dioxide Films

Au, Vicky; Charles, Christine; Bulla, Douglas; Love, John; Boswell, Roderick


Thick silicon dioxide (SiO2) films up to 5 μm have been deposited by helicon activated reactive evaporation (plasma assisted deposition with electron beam evaporation source) as both bilayer and trilayer structures, and the film stress was investigated i

CollectionsANU Research Publications
Date published: 2005
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.1870116


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