Plissard, Sebastien; Dick, Kimberley A.; Larrieu, Guilhem; Godey, Sylvie; Addad, Ahmed; Wallart, Xavier; Caroff, Philippe
We report growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs nanowires on silicon. The influences of growth temperature and V/III ratio are investigated and compared in the case of oxide-covered and oxide-free substrates. We demonstrate a precise positioning process for Ga-nucleated GaAs nanowires using a hole array in a dielectric layer thermally grown on silicon. Crystal quality is analyzed by high resolution transmission electron microscopy. Crystal...[Show more]
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