Gold-free growth of GaAs nanowires on silicon: Arrays and polytypism
Plissard, Sebastien; Dick, Kimberley A.; Larrieu, Guilhem; Godey, Sylvie; Addad, Ahmed; Wallart, Xavier; Caroff, Philippe
Description
We report growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs nanowires on silicon. The influences of growth temperature and V/III ratio are investigated and compared in the case of oxide-covered and oxide-free substrates. We demonstrate a precise positioning process for Ga-nucleated GaAs nanowires using a hole array in a dielectric layer thermally grown on silicon. Crystal quality is analyzed by high resolution transmission electron microscopy. Crystal...[Show more]
Collections | ANU Research Publications |
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Date published: | 2010 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/79523 |
Source: | Nanotechnology |
DOI: | 10.1088/0957-4484/21/38/385602 |
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01_Plissard_Gold-free_growth_of_GaAs_2010.pdf | 379.21 kB | Adobe PDF | Request a copy |
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