Skip navigation
Skip navigation

Gold-free growth of GaAs nanowires on silicon: Arrays and polytypism

Plissard, Sebastien; Dick, Kimberley A.; Larrieu, Guilhem; Godey, Sylvie; Addad, Ahmed; Wallart, Xavier; Caroff, Philippe

Description

We report growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs nanowires on silicon. The influences of growth temperature and V/III ratio are investigated and compared in the case of oxide-covered and oxide-free substrates. We demonstrate a precise positioning process for Ga-nucleated GaAs nanowires using a hole array in a dielectric layer thermally grown on silicon. Crystal quality is analyzed by high resolution transmission electron microscopy. Crystal...[Show more]

CollectionsANU Research Publications
Date published: 2010
Type: Journal article
URI: http://hdl.handle.net/1885/79523
Source: Nanotechnology
DOI: 10.1088/0957-4484/21/38/385602

Download

File Description SizeFormat Image
01_Plissard_Gold-free_growth_of_GaAs_2010.pdf379.21 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator