Selective Wavelength Tuning of Self-assembled InAs Quantum Dots grown on InP
We report the experimental results of tuning the emission wavelength of InAsInP quantum dots (QDs) by varying either the GaAs interlayer thickness or the indium composition of the Inx Ga1-x As interlayer. The InAs QDs are grown on lattice-matched GaInAsP
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|Source:||Applied Physics Letters|
|01_Barik_Selective_Wavelength_Tuning_of_2006.pdf||261.74 kB||Adobe PDF||Request a copy|
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