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InSb nanowire field-effect transistors and quantum-dot devices

Nilsson, H; Deng, M. T.; Caroff, Philippe; Thelander, Claes; Samuelson, Lars; Wernersson, Lars-Erik; Xu, H. Q.

Description

The authors present fabrication and electrical measurements of InSb nanowire field-effect transistors (FETs) and quantum dots. The devices are made on a SiO2-capped Si substrate from InSb segments of InAs/InSb heterostructured nanowires, which are grown by metalorganic vapor phase epitaxy. For the FETs, both single-and dual-gate devices are fabricated. The Si substrate is employed as the back gate in both the single-and dual-gate devices, while a top metal gate is employed as a second gate in...[Show more]

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
URI: http://hdl.handle.net/1885/78794
Source: IEEE Journal on Selected Topics in Quantum Electronics
DOI: 10.1109/JSTQE.2010.2090135

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