InSb nanowire field-effect transistors and quantum-dot devices
The authors present fabrication and electrical measurements of InSb nanowire field-effect transistors (FETs) and quantum dots. The devices are made on a SiO2-capped Si substrate from InSb segments of InAs/InSb heterostructured nanowires, which are grown by metalorganic vapor phase epitaxy. For the FETs, both single-and dual-gate devices are fabricated. The Si substrate is employed as the back gate in both the single-and dual-gate devices, while a top metal gate is employed as a second gate in...[Show more]
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|Source:||IEEE Journal on Selected Topics in Quantum Electronics|
|01_Nilsson_InSb_nanowire_field-effect_2011.pdf||830.12 kB||Adobe PDF||Request a copy|
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