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Optical properties of erbium-implanted porous silicon microcavities

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Reece, Peter; Gal, Michael; Jagadish, Chennupati; Tan, Hark Hoe

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We have used ion implantation for erbium doping of mesoporous silicon microcavities. Optically active erbium-doped microcavities with Q factors in excess of 1500 have been demonstrated. We observed strong modification of the emission properties of the erbium in the microcavity with an accompanying cavity enhancement factor of 25. In addition, power- and temperature-dependent photoluminescence measurements indicate that erbium-implanted porous silicon has excitation mechanism very similar to...[Show more]

dc.contributor.authorReece, Peter
dc.contributor.authorGal, Michael
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorTan, Hark Hoe
dc.date.accessioned2015-12-13T22:41:58Z
dc.date.available2015-12-13T22:41:58Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/78753
dc.description.abstractWe have used ion implantation for erbium doping of mesoporous silicon microcavities. Optically active erbium-doped microcavities with Q factors in excess of 1500 have been demonstrated. We observed strong modification of the emission properties of the erbium in the microcavity with an accompanying cavity enhancement factor of 25. In addition, power- and temperature-dependent photoluminescence measurements indicate that erbium-implanted porous silicon has excitation mechanism very similar to that of erbium in a crystalline silicon host.
dc.publisherAmerican Institute of Physics (AIP)
dc.sourceApplied Physics Letters
dc.titleOptical properties of erbium-implanted porous silicon microcavities
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume85
dc.date.issued2004
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub7341
local.type.statusPublished Version
local.contributor.affiliationReece, Peter, University of New South Wales
local.contributor.affiliationGal, Michael, University of New South Wales
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.bibliographicCitation.issue16
local.bibliographicCitation.startpage3363
local.bibliographicCitation.lastpage3365
local.identifier.doi10.1063/1.1808235
dc.date.updated2015-12-11T10:04:41Z
local.identifier.scopusID2-s2.0-9744253733
CollectionsANU Research Publications

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