Stewart Sears, Kalista; Wong-Leung, Yin-Yin (Jennifer); Jagadish, Chennupati; Tan, Hark Hoe
The influence of various growth parameters such as coverage, the As H3 flow (VIII ratio), and growth interrupts on the self-assembled growth of InAsGaAs quantum dots (QDs) by metal organic chemical vapor deposition is reported. Of the various growth parameters, the As H3 flow has a particularly strong influence. Higher As H3 flows during deposition led to a faster nucleation process and larger islands, while the presence of As H3 after nucleation led to continued island ripening. We suggest...[Show more]
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