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Large Melting-point Hysteresis of Ge Nanocrystals Embedded in SiO 2

Xu, Q; Sharp, I D; Yuan, C W; Yi, D O; Liao, C Y; Glaeser, Andreas M; Minor, A M; Beeman, J W; Ridgway, Mark C; Kluth, Patrick; Ager, J W; Chrzan, D C; Haller, E E

Description

The melting behavior of Ge nanocrystals embedded within SiO2 is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (±17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled

CollectionsANU Research Publications
Date published: 2006
Type: Journal article
URI: http://hdl.handle.net/1885/78734
Source: Physical Review Letters
DOI: 10.1103/PhysRevLett.97.155701

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