Xu, Q; Sharp, I D; Yuan, C W; Yi, D O; Liao, C Y; Glaeser, Andreas M; Minor, A M; Beeman, J W; Ridgway, Mark C; Kluth, Patrick; Ager, J W; Chrzan, D C; Haller, E E
The melting behavior of Ge nanocrystals embedded within SiO2 is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (±17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled
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