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High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning

Plissard, Sebastien; Larrieu, Guilhem; Wallart, Xavier; Caroff, Philippe

Description

We report and detail a method to achieve growth of vertical self-catalyzed GaAs nanowires directly on Si(111) with a near-perfect vertical yield, using electron-beam-defined arrays of holes in a dielectric layer and molecular beam epitaxy. In our conditions, GaAs nanowires are grown along a vapor-liquid-solid mechanism, using insitu self-forming Ga droplets. The focus of this paper is to understand the role of the substrate preparation and of the pre-growth conditioning. Without changing...[Show more]

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
URI: http://hdl.handle.net/1885/78677
Source: Nanotechnology
DOI: 10.1088/0957-4484/22/27/275602

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