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Unit cell structure of crystal polytypes in InAs and InSb nanowires

Kriegner, Dominik; Panse, Christian; Mandl, B; Dick, Kimberley A.; Keplinger, M; Persson, Johan M; Caroff, Philippe; Ercolani, Daniele; Sorba, Lucia; Bechstedt, Friedhelm; Stangl, J; Bauer, G

Description

The atomic distances in hexagonal polytypes of III-V compound semiconductors differ from the values expected from simply a change of the stacking sequence of (111) lattice planes. While these changes were difficult to quantify so far, we accurately determine the lattice parameters of zinc blende, wurtzite, and 4H polytypes for InAs and InSb nanowires, using X-ray diffraction and transmission electron microscopy. The results are compared to density functional theory calculations. Experiment and...[Show more]

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
URI: http://hdl.handle.net/1885/78587
Source: Nano Letters
DOI: 10.1021/nl1041512

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