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Etched Ion Tracks in Silicon Oxide and Silicon Oxynitride as Charge Injection or Extraction Channels for Novel Electronic Structures

Fink, Dietmar; Petrov, A V; Hoppe, K.; Fahrner, W.R.; Papaleo, R M; Berdinsky, A.S.; Chandler, A; Chemseddine, A.; Zrineh, A.; Biswas, A.; Faupel, F.; Chadderton, Lewis

Description

The impact of swift heavy ions onto silicon oxide and silicon oxynitride on silicon creates etchable tracks in these insulators. After their etching and filling-up with highly resistive matter, these nanometric pores can be used as charge extraction or injection paths towards the conducting channel in the underlying silicon. In this way, a novel family of electronic structures has been realized. German patent pending (May 2003).1 The basic characteristics of these "TEMPOS" (=tunable electronic...[Show more]

CollectionsANU Research Publications
Date published: 2004
Type: Journal article
URI: http://hdl.handle.net/1885/78270
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/j.nimb.2003.12.083

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