Etched Ion Tracks in Silicon Oxide and Silicon Oxynitride as Charge Injection or Extraction Channels for Novel Electronic Structures
The impact of swift heavy ions onto silicon oxide and silicon oxynitride on silicon creates etchable tracks in these insulators. After their etching and filling-up with highly resistive matter, these nanometric pores can be used as charge extraction or injection paths towards the conducting channel in the underlying silicon. In this way, a novel family of electronic structures has been realized. German patent pending (May 2003).1 The basic characteristics of these "TEMPOS" (=tunable electronic...[Show more]
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
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