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Electronic Conduction Properties of Au/C 60 /p-Si and C 60 /Au/p-Si Sandwich Structures: I-V and Transducer Characteristics

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Berdinsky, A.S.; Fink, Dietmar; Yoo, J B; Chadderton, Lewis; Chun, H.G.; Han, J H; Dragunov, V.P.

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Gold-fullerite [C 60]-silicon (p-type) sandwich structures have been fabricated in order to investigate intrinsic cross-sectional and planar electronic conductive properties, in particular the C 60/p-Si p-n heterojunction. The turn-on voltage of this p-n

dc.contributor.authorBerdinsky, A.S.
dc.contributor.authorFink, Dietmar
dc.contributor.authorYoo, J B
dc.contributor.authorChadderton, Lewis
dc.contributor.authorChun, H.G.
dc.contributor.authorHan, J H
dc.contributor.authorDragunov, V.P.
dc.date.accessioned2015-12-13T22:40:22Z
dc.identifier.issn0038-1098
dc.identifier.urihttp://hdl.handle.net/1885/78212
dc.description.abstractGold-fullerite [C 60]-silicon (p-type) sandwich structures have been fabricated in order to investigate intrinsic cross-sectional and planar electronic conductive properties, in particular the C 60/p-Si p-n heterojunction. The turn-on voltage of this p-n
dc.publisherPergamon-Elsevier Ltd
dc.sourceSolid State Communications
dc.subjectKeywords: Fullerite crystal films; Silicon pressure transducers; Crystallization; Crystals; Equivalent circuits; Fullerenes; Heavy ions; Heterojunctions; Radiation effects; Sandwich structures; Scanning electron microscopy; Silicon; Strain; Thin films; Transducers; A. Fullerenes; A. Heterojunctions; A. Thin films; C. Scanning and transmission electron microscopy; D. Radiation effects and pressure
dc.titleElectronic Conduction Properties of Au/C 60 /p-Si and C 60 /Au/p-Si Sandwich Structures: I-V and Transducer Characteristics
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume130
dc.date.issued2004
local.identifier.absfor020201 - Atomic and Molecular Physics
local.identifier.ariespublicationMigratedxPub6890
local.type.statusPublished Version
local.contributor.affiliationBerdinsky, A.S., Novosibirsk State Technical University
local.contributor.affiliationFink, Dietmar, Hahn-Meitner-Institut
local.contributor.affiliationYoo, J B, Sungkyunkwan University
local.contributor.affiliationChadderton, Lewis, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationChun, H.G., University of Ulsan
local.contributor.affiliationHan, J H, Samsung Advanced Institute of Technology
local.contributor.affiliationDragunov, V.P., Novosibirsk State Technical University
local.description.embargo2037-12-31
local.bibliographicCitation.issue12
local.bibliographicCitation.startpage809
local.bibliographicCitation.lastpage814
local.identifier.doi10.1016/j.ssc.2004.03.051
dc.date.updated2015-12-11T09:55:33Z
local.identifier.scopusID2-s2.0-2442570644
CollectionsANU Research Publications

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