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The Rapid Amorphisation of In 0.53 Ga 0.47 As relative to Both InAS and GaAs

Wesch, W; Ridgway, Mark C

Description

Rutherford backscattering spectrometry in combination with channeling has been used to compare the ion-irradiation-induced amorphisation of In 0.53Ga0.47As with that of InAs and GaAs. In contrast to the well-known behaviour of AlxGa1-xAs, the ternary alloy In0.53Ga0.47As did not exhibit amorphisation kinetics intermediate between those of the two binary extremes. Specifically, the critical nuclear energy deposition required to render In0.53Ga 0.47As amorphous was less than that of both InAs and...[Show more]

CollectionsANU Research Publications
Date published: 2004
Type: Journal article
URI: http://hdl.handle.net/1885/77990
Source: Materials Science in Semiconductor Processing
DOI: 10.1016/j.mssp.2003.12.002

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