Round Robin: Measurement of H Implantation Distributions in Si by Elastic Recoil Detection
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Boudreault, G; Elliman, Robert; Grotzschel, R; Gujrathi, S.; Jeynes, C.; Lennard, W N; Rauhala, E; Sajavaara, T; Timmers, Heiko; Wang, Yanbin; Dall (previously Weijers), Tessica
Description
A 200 mm amorphised Si wafer was implanted with 6-keV H + ions at a nominal fluence of 5×10 16 atoms/cm 2. The uniformity of the implant was better than 2% over the wafer. Samples of the wafer were analysed for absolute H fluence by nuclear reaction anal
Collections | ANU Research Publications |
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Date published: | 2004 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/77964 |
Source: | Nuclear Instruments and Methods in Physics Research: Section B |
DOI: | 10.1016/j.nimb.2004.02.022 |
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