Round Robin: Measurement of H Implantation Distributions in Si by Elastic Recoil Detection
A 200 mm amorphised Si wafer was implanted with 6-keV H + ions at a nominal fluence of 5×10 16 atoms/cm 2. The uniformity of the implant was better than 2% over the wafer. Samples of the wafer were analysed for absolute H fluence by nuclear reaction anal
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
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