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Round Robin: Measurement of H Implantation Distributions in Si by Elastic Recoil Detection

Boudreault, G; Elliman, Robert; Grotzschel, R; Gujrathi, S.; Jeynes, C.; Lennard, W N; Rauhala, E; Sajavaara, T; Timmers, Heiko; Wang, Yanbin; Dall (previously Weijers), Tessica


A 200 mm amorphised Si wafer was implanted with 6-keV H + ions at a nominal fluence of 5×10 16 atoms/cm 2. The uniformity of the implant was better than 2% over the wafer. Samples of the wafer were analysed for absolute H fluence by nuclear reaction anal

CollectionsANU Research Publications
Date published: 2004
Type: Journal article
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/j.nimb.2004.02.022


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