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Formation of Ge nanoparticles in SiOxNy by ion implantation and thermal annealing

Mirzaei, Sahar; Kremer, Felipe; Sprouster, D. J.; Araujo, L L; Feng, Ruixing; Glover, C J; Ridgway, Mark C


Germanium nanoparticles embedded within dielectric matrices hold much promise for applications in optoelectronic and electronic devices. Here we investigate the formation of Ge nanoparticles in amorphous SiO1.67N0.14 as a function of implanted atom concentration and thermal annealing temperature. Using x-ray absorption spectroscopy and other complementary techniques, we show Ge nanoparticles exhibit significant finite-size effects such that the coordination number decreases and structural...[Show more]

CollectionsANU Research Publications
Date published: 2015
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.4933396


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