Variable Temperature Hall-effect Measurements in Ion Bombarded InP
Fe doped semi-insulating and p-type InP were implanted with P+ ions to produce an excess of phosphorous atoms in the order of 0.1 at.%. Subsequent annealing in Ar ambient in the temperature interval 400-600 °C was performed for 30 s in a rapid thermal an
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
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