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Variable Temperature Hall-effect Measurements in Ion Bombarded InP

Presenti, G C; Boudinov, H; Carmody, C; Jagadish, Chennupati


Fe doped semi-insulating and p-type InP were implanted with P+ ions to produce an excess of phosphorous atoms in the order of 0.1 at.%. Subsequent annealing in Ar ambient in the temperature interval 400-600 °C was performed for 30 s in a rapid thermal an

CollectionsANU Research Publications
Date published: 2004
Type: Journal article
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/j.nimb.2003.12.062


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