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Gallium and Oxygen Accumulations on Gallium Nitride Surfaces Following Argon Ion Milling in Ultra-High Vacuum Conditions

Butcher, Kenneth Scott A; Afifuddin, A; Tansley, T L; Brack, N; Pigram, P J; Timmers, Heiko; Prince, K E; Elliman, Robert

Description

Metallic gallium was observed on the surfaces of GaN commercial samples following argon ion milling. SIMS measurements confirmed that the commercial GaN had approximately 0.02% bulk oxygen present. The SIMS signal was standardized using a specimen of known oxygen content, as determined by elastic recoil detection analysis using 200MeV heavy ions of 197Au. Despite this 2-5% oxygen was observed by XPS in the bulk of the GaN after the argon ion milling. This oxygen is believed to be from the...[Show more]

CollectionsANU Research Publications
Date published: 2004
Type: Journal article
URI: http://hdl.handle.net/1885/77929
Source: Applied Surface Science
DOI: 10.1016/j.apsusc.2004.02.029

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