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Modeling recombination at the Si-Al2O3 interface

Black, Lachlan; McIntosh, Keith

Description

In this paper, we present a complete set of data on the silicon surface passivation parameters of Al 2O3 deposited by atmospheric pressure chemical vapor deposition with triethyldialuminum-tri-(sec-butoxide) and H2 O precursors at temperatures between 325

CollectionsANU Research Publications
Date published: 2013
Type: Journal article
URI: http://hdl.handle.net/1885/77664
Source: IEEE Journal of Photovoltaics
DOI: 10.1109/JPHOTOV.2013.2247464

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