Heavy Ion Induced Intermixing at Ta/Si and Ta/SiO 2 Interfaces
Systematic ion beam mixing experiments have been performed on Ta/SiO 2 and Ta/Si interfaces. Tantalum was evaporated on silicon and SiO2/silicon substrates by means of molecular beam epithaxy. Samples were subsequently irradiated with 500 keV Si, 100 keV
|Collections||ANU Research Publications|
|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
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