Skip navigation
Skip navigation

Heavy Ion Induced Intermixing at Ta/Si and Ta/SiO 2 Interfaces

Berky, W; Balogh, A G; Elliman, Robert

Description

Systematic ion beam mixing experiments have been performed on Ta/SiO 2 and Ta/Si interfaces. Tantalum was evaporated on silicon and SiO2/silicon substrates by means of molecular beam epithaxy. Samples were subsequently irradiated with 500 keV Si, 100 keV

CollectionsANU Research Publications
Date published: 2004
Type: Journal article
URI: http://hdl.handle.net/1885/77550
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/j.nimb.2004.06.026

Download

There are no files associated with this item.


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator