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A Partially Depleted Absorber Photodiode with Graded Doping Injection Regions

Li, Xiao-Lei; Li, N; Demiguel, S; Zheng, X; Campbell, J C; Jagadish, Chennupati; Tan, Hark Hoe


A partially depleted absorber photodiode with graded absorption injection regions is reported. The 880-nm-thick In0.53Ga0.47As absorption region consists of a depletion layer and graded n- and p-type undepleted injection regions. Under backside illumination at 1.55-μm wavelength, an 8-μm-diameter photodiode exhibited an increase in bandwidth with increasing photocurrent. A saturation current bandwidth product of 990 mA · GHz and a responsivity of 0.67 A/W were achieved.

CollectionsANU Research Publications
Date published: 2004
Type: Journal article
Source: IEEE Photonics Technology Letters
DOI: 10.1109/LPT.2004.834563


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