Effect of Material Structure on Photoluminescence Spectra from Silicon Nanocrystals
Commercially prepared (100) oriented silicon wafers were oxidized to produce SiO2 layers of 5 μm, 970 nm, 650 nm and 103 nm. Each sample was annealed at 1050°C for 1 h in a forming gas ambient. The photoluminescence (PL) emission was collected with f4 o
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
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