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Effect of Material Structure on Photoluminescence Spectra from Silicon Nanocrystals

Orbons, S; Spooner, M G; Elliman, Robert

Description

Commercially prepared (100) oriented silicon wafers were oxidized to produce SiO2 layers of 5 μm, 970 nm, 650 nm and 103 nm. Each sample was annealed at 1050°C for 1 h in a forming gas ambient. The photoluminescence (PL) emission was collected with f4 o

CollectionsANU Research Publications
Date published: 2004
Type: Journal article
URI: http://hdl.handle.net/1885/77521
Source: Journal of Applied Physics
DOI: 10.1063/1.1790058

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