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Gold-free ternary III-V antimonide nanowire arrays on silicon: Twin-free down to the first bilayer

Conesa-Boj, Sonia; Kriegner, Dominik; Han, Xiang-Lei; Plissard, Sebastien; Wallart, Xavier; Stangl, J; Fontcuberta i Morral, Anna; Caroff, Philippe

Description

With the continued maturation of III-V nanowire research, expectations of material quality should be concomitantly raised. Ideally, III-V nanowires integrated on silicon should be entirely free of extended planar defects such as twins, stacking faults, or

CollectionsANU Research Publications
Date published: 2014
Type: Journal article
URI: http://hdl.handle.net/1885/77400
Source: Nano Letters
DOI: 10.1021/nl404085a

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