The impact of silicon CCD photon spread on quantitative analyses of luminescence images
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Walters, Daniel; Fell, Andreas; Franklin, Evan; MacDonald, Daniel; Mitchell, Bernhard; Trupke, Thorsten
Description
Commercial and R&D photoluminescence imaging systems commonly employ indirect bandgap silicon charge-coupled device (CCD) imaging sensors. Silicon is a weak absorber of the near-infrared band-to-band emission of silicon, and significant lateral spreading
| Collections | ANU Research Publications |
|---|---|
| Date published: | 2014 |
| Type: | Journal article |
| URI: | http://hdl.handle.net/1885/77361 |
| Source: | IEEE Journal of Photovoltaics |
| DOI: | 10.1109/JPHOTOV.2013.2287912 |
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| File | Description | Size | Format | Image |
|---|---|---|---|---|
| 01_Walters_The_impact_of_silicon_CCD_2014.pdf | 648.14 kB | Adobe PDF | Request a copy |
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