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The impact of silicon CCD photon spread on quantitative analyses of luminescence images

Walters, Daniel; Fell, Andreas; Franklin, Evan; MacDonald, Daniel; Mitchell, Bernhard; Trupke, Thorsten

Description

Commercial and R&D photoluminescence imaging systems commonly employ indirect bandgap silicon charge-coupled device (CCD) imaging sensors. Silicon is a weak absorber of the near-infrared band-to-band emission of silicon, and significant lateral spreading

CollectionsANU Research Publications
Date published: 2014
Type: Journal article
URI: http://hdl.handle.net/1885/77361
Source: IEEE Journal of Photovoltaics
DOI: 10.1109/JPHOTOV.2013.2287912

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