Graphene synthesis by C implantation into Cu foils
Cu foils of 2 × 2 cm2 have been implanted with 70 keV C- ions to nominal fluences of (2-10) × 1015cm -2 at room temperature (RT) and subsequently annealed at 900-1100 C for 15 min, before being cooled to RT to form graphene layers on the Cu surfaces. An
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