Ultrafast carrier trapping and recombination in highly resistive ion implanted InP
Ultrafast carrier trapping and recombination in highly resistive ion implanted InP were investigated. The electrical and optical features were analyzed by using Hall effect measurements and time resolved photoluminescence. Results showed that low temperature annealing yielded the fastest response times.
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Carmody_Ultrafast_carrier_trapping_and_2003.pdf||398.89 kB||Adobe PDF||Request a copy|
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