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Ultrafast carrier trapping and recombination in highly resistive ion implanted InP

Carmody, C; Tan, Hoe Hark; Jagadish, Chennupati; Gaarder, A.; Marcinkevicius, S

Description

Ultrafast carrier trapping and recombination in highly resistive ion implanted InP were investigated. The electrical and optical features were analyzed by using Hall effect measurements and time resolved photoluminescence. Results showed that low temperature annealing yielded the fastest response times.

CollectionsANU Research Publications
Date published: 2003
Type: Journal article
URI: http://hdl.handle.net/1885/77209
Source: Journal of Applied Physics
DOI: 10.1063/1.1576516

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