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Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications

Carmody, C; Jagadish, Chennupati; Gaarder, A.; Marcinkevicius, S; Tan, Hark Hoe

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Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications was studied. The shortest carrier lifetimes in InGaAs were achieved at annealing temperatures much lower than those that were associated with Fe activation. A jump in sheet resistance

dc.contributor.authorCarmody, C
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorGaarder, A.
dc.contributor.authorMarcinkevicius, S
dc.contributor.authorTan, Hark Hoe
dc.date.accessioned2015-12-13T22:37:39Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/77191
dc.description.abstractIon-implanted In0.53Ga0.47As for ultrafast optoelectronic applications was studied. The shortest carrier lifetimes in InGaAs were achieved at annealing temperatures much lower than those that were associated with Fe activation. A jump in sheet resistance
dc.publisherAmerican Institute of Physics (AIP)
dc.sourceApplied Physics Letters
dc.subjectKeywords: Annealing; Computer simulation; Electric conductivity; Hall effect; Optoelectronic devices; Carrier lifetimes; Ion implantation
dc.titleIon-implanted In0.53Ga0.47As for ultrafast optoelectronic applications
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume82
dc.date.issued2003
local.identifier.absfor091299 - Materials Engineering not elsewhere classified
local.identifier.absfor020501 - Classical and Physical Optics
local.identifier.ariespublicationMigratedxPub6084
local.type.statusPublished Version
local.contributor.affiliationCarmody, C, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationGaarder, A., Royal Institute of Technology
local.contributor.affiliationMarcinkevicius, S, Royal Institute of Technology
local.description.embargo2037-12-31
local.bibliographicCitation.issue22
local.bibliographicCitation.startpage3913
local.bibliographicCitation.lastpage3915
local.identifier.doi10.1063/1.1579565
dc.date.updated2015-12-11T09:37:36Z
local.identifier.scopusID2-s2.0-0037631798
CollectionsANU Research Publications

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