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Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications

Carmody, C; Tan, Hoe Hark; Jagadish, Chennupati; Gaarder, A.; Marcinkevicius, S

Description

Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications was studied. The shortest carrier lifetimes in InGaAs were achieved at annealing temperatures much lower than those that were associated with Fe activation. A jump in sheet resistance

CollectionsANU Research Publications
Date published: 2003
Type: Journal article
URI: http://hdl.handle.net/1885/77191
Source: Applied Physics Letters
DOI: 10.1063/1.1579565

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