Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications
Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications was studied. The shortest carrier lifetimes in InGaAs were achieved at annealing temperatures much lower than those that were associated with Fe activation. A jump in sheet resistance
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Carmody_Ion-implanted_In0.53Ga0.47As_2003.pdf||48.15 kB||Adobe PDF||Request a copy|
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