Skip navigation
Skip navigation
The system will be down for maintenance between 8:00 and 8:15am on Thursday 13, December 2018

InGaAs Quantum Dots Grown with GaP Strain Compensation Layers

Lever McGowan, Penelope; Jagadish, Chennupati; Tan, Hark Hoe

Description

The use of GaP as a strain compensation layer was studied. The GaP layers were in tensile strain with respect to GaAs, with a lattice mismatch of 4%, whereas the In0.5Ga0.5As dots were in compressive strain. The samples were grown using a low-pressure horizontal flow metalorganic chemical vapor deposition (MOCVD) reactor. It was found that the density of dots in the top layer of the stack is increased as the GaP layer is deposited closer to the dot layer.

CollectionsANU Research Publications
Date published: 2004
Type: Journal article
URI: http://hdl.handle.net/1885/77128
Source: Journal of Applied Physics
DOI: 10.1063/1.1707230

Download

File Description SizeFormat Image
01_Lever McGowan_InGaAs_Quantum_Dots_Grown_with_2004.pdf272.58 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  27 November 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator