Lever McGowan, Penelope; Tan, Hoe Hark; Jagadish, Chennupati
The use of GaP as a strain compensation layer was studied. The GaP layers were in tensile strain with respect to GaAs, with a lattice mismatch of 4%, whereas the In0.5Ga0.5As dots were in compressive strain. The samples were grown using a low-pressure horizontal flow metalorganic chemical vapor deposition (MOCVD) reactor. It was found that the density of dots in the top layer of the stack is increased as the GaP layer is deposited closer to the dot layer.
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