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Effects of Thermal Stress on Interdiffusion in InGaAsN/GaAs Quantum Dots

Gao, Qiang; Fu, Lan; Jagadish, Chennupati; Tan, Hark Hoe


The control of interdiffusion in InGaAsN/GaAs quantum dots by thermal stress was discussed. It was observed that by depositing TiO2 layers without degrading the pholuminescence properties, the thermal interdiffusion was effectively suppressed. A controlled blueshifting of the band gap was achieved by combining annealing temperature and TiO2 thickness. It was suggested that the method has significant potential for optoelectronic device integration using selective-area defect engineering.

CollectionsANU Research Publications
Date published: 2004
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.1760886


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