Gao, Qiang; Tan, Hoe Hark; Fu, Lan; Jagadish, Chennupati
The control of interdiffusion in InGaAsN/GaAs quantum dots by thermal stress was discussed. It was observed that by depositing TiO2 layers without degrading the pholuminescence properties, the thermal interdiffusion was effectively suppressed. A controlled blueshifting of the band gap was achieved by combining annealing temperature and TiO2 thickness. It was suggested that the method has significant potential for optoelectronic device integration using selective-area defect engineering.
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