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Implantation Angle Dependent Study of Vacancy Related Defect Profiles in Ion Implanted Silicon

Lay, M D H; McCallum, Jeffrey C; Jagadish, Chennupati

Description

The effect of implantation angle on the profile of the vacancy-phosphorus and divacancy centres (VP/V2-) in n-type 0.7-1.1 Ωcm Cz-grown (1 0 0) Si has been examined using depth profiling with deep-level transient spectroscopy. Samples were mounted with 1

CollectionsANU Research Publications
Date published: 2003
Type: Journal article
URI: http://hdl.handle.net/1885/77078
Source: Physica B
DOI: 10.1016/j.physb.2003.09.150

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