Implantation Angle Dependent Study of Vacancy Related Defect Profiles in Ion Implanted Silicon
The effect of implantation angle on the profile of the vacancy-phosphorus and divacancy centres (VP/V2-) in n-type 0.7-1.1 Ωcm Cz-grown (1 0 0) Si has been examined using depth profiling with deep-level transient spectroscopy. Samples were mounted with 1
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