Skip navigation
Skip navigation

Implantation Angle Dependent Study of Vacancy Related Defect Profiles in Ion Implanted Silicon

link to publisher version

  • Altmetric Citations

Lay, M D H; McCallum, Jeffrey C; Jagadish, Chennupati

Description

The effect of implantation angle on the profile of the vacancy-phosphorus and divacancy centres (VP/V2-) in n-type 0.7-1.1 Ωcm Cz-grown (1 0 0) Si has been examined using depth profiling with deep-level transient spectroscopy. Samples were mounted with 1

CollectionsANU Research Publications
Date published: 2003
Type: Journal article
URI: http://hdl.handle.net/1885/77078
Source: Physica B
DOI: 10.1016/j.physb.2003.09.150

Download

There are no files associated with this item.
Show full item record


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator