Implantation Angle Dependent Study of Vacancy Related Defect Profiles in Ion Implanted Silicon
Lay, M D H; McCallum, Jeffrey C; Jagadish, Chennupati
Description
The effect of implantation angle on the profile of the vacancy-phosphorus and divacancy centres (VP/V2-) in n-type 0.7-1.1 Ωcm Cz-grown (1 0 0) Si has been examined using depth profiling with deep-level transient spectroscopy. Samples were mounted with 1
| Collections | ANU Research Publications |
|---|---|
| Date published: | 2003 |
| Type: | Journal article |
| URI: | http://hdl.handle.net/1885/77078 |
| Source: | Physica B |
| DOI: | 10.1016/j.physb.2003.09.150 |
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