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Ion-Beam-Defect Processes in Group-III Nitrides and ZnO

Kucheyev, Sergei O; Williams, James; Jagadish, Chennupati

Description

Recently, there has been much interest in wide band-gap wurtzite semiconductors such as group-III nitrides (GaN, AlGaN, and InGaN) and ZnO. Ion-beam-defect processes are considerably more complex in these wurtzite semiconductors than in the case of both elemental and group-III-V cubic semiconductors. This brief review focuses on our recent studies of the following aspects of ion-beam-defect processes: (i) effects of implanted species and the density of collision cascades, (ii) the nature of...[Show more]

CollectionsANU Research Publications
Date published: 2004
Type: Journal article
URI: http://hdl.handle.net/1885/76721
Source: Vacuum
DOI: 10.1016/j.vacuum.2003.12.032

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