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Pop-In Events Induced by Spherical Indentation in Compound Semiconductors

Bradby, Jodie; Williams, James; Swain, Michael Vincent

Description

Details of the elastic-plastic transitions in crystalline compound semiconductors have been examined using spherical indentation. Two cubic (InP and GaAs) and two hexagonally structured semiconductors (ZnO and GaN) have been studied. A series of indentations have been made in each material at a number of different loads. The resulting load-penetration curves exhibited one or more discontinuities on loading (so called pop-in events). The load at which the initial pop-in event occurred has been...[Show more]

dc.contributor.authorBradby, Jodie
dc.contributor.authorWilliams, James
dc.contributor.authorSwain, Michael Vincent
dc.date.accessioned2015-12-13T22:36:19Z
dc.date.available2015-12-13T22:36:19Z
dc.identifier.issn0884-2914
dc.identifier.urihttp://hdl.handle.net/1885/76707
dc.description.abstractDetails of the elastic-plastic transitions in crystalline compound semiconductors have been examined using spherical indentation. Two cubic (InP and GaAs) and two hexagonally structured semiconductors (ZnO and GaN) have been studied. A series of indentations have been made in each material at a number of different loads. The resulting load-penetration curves exhibited one or more discontinuities on loading (so called pop-in events). The load at which the initial pop-in event occurred has been measured along with the corresponding indenter extension. The elastic and elastic-plastic response of each material to spherical indentation has been calculated and compared with the experiment. By taking the difference between the elastic and elastic-plastic penetration depths, it has been found that the pop-in extension at each load could be predicted for each material. The detailed deformation behavior of each of the materials during indentation has also been discussed.
dc.publisherMaterials Research Society
dc.sourceJournal of Materials Research
dc.subjectKeywords: Crystalline compound semiconductors; Deformation behavior; Elastic plastic transition; Spherical indentation; Crystalline materials; Deformation; Elastic moduli; Elastoplasticity; Hardness; Load testing; Semiconducting gallium arsenide; Semiconducting gal
dc.titlePop-In Events Induced by Spherical Indentation in Compound Semiconductors
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume19
dc.date.issued2004
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub5516
local.type.statusPublished Version
local.contributor.affiliationBradby, Jodie, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationSwain, Michael Vincent, University of Sydney
local.bibliographicCitation.issue1
local.bibliographicCitation.startpage380
local.bibliographicCitation.lastpage386
dc.date.updated2015-12-11T09:31:15Z
local.identifier.scopusID2-s2.0-4444317159
CollectionsANU Research Publications

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