Pop-In Events Induced by Spherical Indentation in Compound Semiconductors
Details of the elastic-plastic transitions in crystalline compound semiconductors have been examined using spherical indentation. Two cubic (InP and GaAs) and two hexagonally structured semiconductors (ZnO and GaN) have been studied. A series of indentations have been made in each material at a number of different loads. The resulting load-penetration curves exhibited one or more discontinuities on loading (so called pop-in events). The load at which the initial pop-in event occurred has been...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Materials Research|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.