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Pop-In Events Induced by Spherical Indentation in Compound Semiconductors

Bradby, Jodie; Williams, James; Swain, Michael Vincent

Description

Details of the elastic-plastic transitions in crystalline compound semiconductors have been examined using spherical indentation. Two cubic (InP and GaAs) and two hexagonally structured semiconductors (ZnO and GaN) have been studied. A series of indentations have been made in each material at a number of different loads. The resulting load-penetration curves exhibited one or more discontinuities on loading (so called pop-in events). The load at which the initial pop-in event occurred has been...[Show more]

CollectionsANU Research Publications
Date published: 2004
Type: Journal article
URI: http://hdl.handle.net/1885/76707
Source: Journal of Materials Research

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