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Effective surface passivation of p-type crystalline silicon with silicon oxides formed by light-induced anodisation

Cui, Jie; Grant, Nicholas; Lennon, Alison

Description

Electronic surface passivation of p-type crystalline silicon by anodic silicon dioxide (SiO2) was investigated. The anodic SiO2 was grown by light-induced anodisation (LIA) in diluted sulphuric acid at room temperature, a process that is significantly less-expensive than thermal oxidation which is widely-used in silicon solar cell fabrication. After annealing in oxygen and then forming gas at 400 °C for 30 min, the effective minority carrier lifetime of 3-5 Ω cm, boron-doped Czochralski silicon...[Show more]

CollectionsANU Research Publications
Date published: 2014
Type: Journal article
URI: http://hdl.handle.net/1885/76359
Source: Applied Surface Science
DOI: 10.1016/j.apsusc.2014.08.028

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