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Effect of oxygen implantation on microstructural and optical properties of ZnTe:O intermediate-band photovoltaic materials

Zhen, K.; Gu, Ran; Ye, Jiandong; Gu, Shulin; Ren, F. F.; Zhu, Shunming; Huang, Shi-Min; Tang, Kun; Tang, Dong-Ming; Yang, Yi; Zhang, R.

Description

Group II-VI and III-V highly mismatched alloys are promising material systems in the application of high efficiency intermediate-band solar cell (IBSC), however, the key issues including band engineering of intermediate band still remain challenging. In this study, ZnTe:O alloys have been produced by isoelectric oxygen implantation into ZnTe single crystal, and the influences of implantation on the microstructural and optical properties of ZnTe:O have been investigated in detail. It is found...[Show more]

dc.contributor.authorZhen, K.
dc.contributor.authorGu, Ran
dc.contributor.authorYe, Jiandong
dc.contributor.authorGu, Shulin
dc.contributor.authorRen, F. F.
dc.contributor.authorZhu, Shunming
dc.contributor.authorHuang, Shi-Min
dc.contributor.authorTang, Kun
dc.contributor.authorTang, Dong-Ming
dc.contributor.authorYang, Yi
dc.contributor.authorZhang, R.
dc.date.accessioned2015-12-13T22:34:41Z
dc.identifier.issn1000-3290
dc.identifier.urihttp://hdl.handle.net/1885/76238
dc.description.abstractGroup II-VI and III-V highly mismatched alloys are promising material systems in the application of high efficiency intermediate-band solar cell (IBSC), however, the key issues including band engineering of intermediate band still remain challenging. In this study, ZnTe:O alloys have been produced by isoelectric oxygen implantation into ZnTe single crystal, and the influences of implantation on the microstructural and optical properties of ZnTe:O have been investigated in detail. It is found that a proper dose of oxygen ions can lead to a compressive strain in the lattice and induce the formation of intermediate band located on the energy level of ~0.45 eV below the conduction band. While a high dose of oxygen ions causes ZnTe surface layer to become amorphous and enhances the deep level emission around 1.6 eV, which is related to Zn vacancies. Results of resonant Raman and time-resolved photoluminescence spectra indicate that implantation induced intermediate band is related to the localized exciton emission bound to oxygen isoelectric trap, and the associated photo excited carriers have a relatively long decay time. This suggests that the reduction of lattice distortion and alloy disorder may be needed for converting localized states of the intermediate band into extended states, which is crucial to realize high efficiency ZnTe:O based IBSCs.
dc.publisherKexue Chubaneshe/Science Press
dc.sourceWuli Xuebao/Acta Physica Sinica
dc.titleEffect of oxygen implantation on microstructural and optical properties of ZnTe:O intermediate-band photovoltaic materials
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume63
dc.date.issued2014
local.identifier.absfor010000 - MATHEMATICAL SCIENCES
local.identifier.ariespublicationU3488905xPUB5088
local.type.statusPublished Version
local.contributor.affiliationZhen, K., Nanjing University
local.contributor.affiliationGu, Ran, Nanjing University
local.contributor.affiliationYe, Jiandong, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationGu, Shulin, Nanjing University
local.contributor.affiliationRen, F. F., Nanjing University
local.contributor.affiliationZhu, Shunming, Nanjing University
local.contributor.affiliationHuang, Shi-Min, Nanjing University
local.contributor.affiliationTang, Kun, Nanjing University
local.contributor.affiliationTang, Dong-Ming, nanjing university
local.contributor.affiliationYang, Yi, nanjing university
local.contributor.affiliationZhang, R., Nanjing University
local.description.embargo2037-12-31
local.bibliographicCitation.issue23
local.bibliographicCitation.startpage1
local.bibliographicCitation.lastpage8
local.identifier.doi10.7498/aps.63.237103
dc.date.updated2015-12-11T09:23:08Z
local.identifier.scopusID2-s2.0-84916908795
local.identifier.thomsonID000346904700032
CollectionsANU Research Publications

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