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Atomic scale strain relaxation in axial semiconductor III-V nanowire heterostructures

de la Mata, María; César, Magén; Caroff, Philippe; Jordi, Arbiol

Description

Combination of mismatched materials in semiconductor nanowire heterostructures offers a freedom of bandstructure engineering that is impossible in standard planar epitaxy. Nevertheless, the presence of strain and structural defects directly control the optoelectronic properties of these nanomaterials. Understanding with atomic accuracy how mismatched heterostructures release or accommodate strain, therefore, is highly desirable. By using atomic resolution high angle annular dark field scanning...[Show more]

CollectionsANU Research Publications
Date published: 2014
Type: Journal article
URI: http://hdl.handle.net/1885/76020
Source: Nano Letters
DOI: 10.1021/nl503273j

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