Skip navigation
Skip navigation

Atomic scale strain relaxation in axial semiconductor III-V nanowire heterostructures

de la Mata, María; César, Magén; Caroff, Philippe; Jordi, Arbiol


Combination of mismatched materials in semiconductor nanowire heterostructures offers a freedom of bandstructure engineering that is impossible in standard planar epitaxy. Nevertheless, the presence of strain and structural defects directly control the optoelectronic properties of these nanomaterials. Understanding with atomic accuracy how mismatched heterostructures release or accommodate strain, therefore, is highly desirable. By using atomic resolution high angle annular dark field scanning...[Show more]

CollectionsANU Research Publications
Date published: 2014
Type: Journal article
Source: Nano Letters
DOI: 10.1021/nl503273j


File Description SizeFormat Image
01_de la Mata_Atomic_scale_strain_relaxation_2014.pdf5.56 MBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator