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Silicon surface passivation by atomic-layer-deposited Al2O3 facilitated in situ by the combination of H2O and O3 as reactants

Suh, Dongchui; Liang, Wensheng

Description

We investigate the effect of O3 and H2O oxidant pre-pulse prior to Al2O3 atomic layer deposition for Si surface passivation. Interfacial oxide SiOx formed by the O3 pre-pulse is more beneficial than that by H2O to a high level of surface passivation. The

dc.contributor.authorSuh, Dongchui
dc.contributor.authorLiang, Wensheng
dc.date.accessioned2015-12-13T22:32:59Z
dc.identifier.issn1862-6254
dc.identifier.urihttp://hdl.handle.net/1885/75818
dc.description.abstractWe investigate the effect of O3 and H2O oxidant pre-pulse prior to Al2O3 atomic layer deposition for Si surface passivation. Interfacial oxide SiOx formed by the O3 pre-pulse is more beneficial than that by H2O to a high level of surface passivation. The
dc.publisherWiley-VCH Verlag GMBH
dc.sourcePhysica Status Solidi: Rapid Research Letters
dc.titleSilicon surface passivation by atomic-layer-deposited Al2O3 facilitated in situ by the combination of H2O and O3 as reactants
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume8
dc.date.issued2014
local.identifier.absfor020400 - CONDENSED MATTER PHYSICS
local.identifier.ariespublicationU3488905xPUB4806
local.type.statusPublished Version
local.contributor.affiliationSuh, Dongchui, Seoul National University
local.contributor.affiliationLiang, Wensheng, College of Engineering and Computer Science, ANU
local.description.embargo2037-12-31
local.bibliographicCitation.issue9
local.bibliographicCitation.startpage771
local.bibliographicCitation.lastpage775
local.identifier.doi10.1002/pssr.201409263
dc.date.updated2015-12-11T09:12:48Z
local.identifier.scopusID2-s2.0-84908209734
local.identifier.thomsonID000342692300004
CollectionsANU Research Publications

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