Silicon surface passivation by atomic-layer-deposited Al2O3 facilitated in situ by the combination of H2O and O3 as reactants
We investigate the effect of O3 and H2O oxidant pre-pulse prior to Al2O3 atomic layer deposition for Si surface passivation. Interfacial oxide SiOx formed by the O3 pre-pulse is more beneficial than that by H2O to a high level of surface passivation. The
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|Source:||Physica Status Solidi: Rapid Research Letters|
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