Silicon surface passivation by atomic-layer-deposited Al2O3 facilitated in situ by the combination of H2O and O3 as reactants
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Suh, Dongchui; Liang, Wensheng
Description
We investigate the effect of O3 and H2O oxidant pre-pulse prior to Al2O3 atomic layer deposition for Si surface passivation. Interfacial oxide SiOx formed by the O3 pre-pulse is more beneficial than that by H2O to a high level of surface passivation. The
Collections | ANU Research Publications |
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Date published: | 2014 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/75818 |
Source: | Physica Status Solidi: Rapid Research Letters |
DOI: | 10.1002/pssr.201409263 |
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