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Attraction of semiconductor nanowires: An in situ observation

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Chen, Bin; Gao, Qiang; Chang, Li; Wang, Yan-Bo; Chen, Zi-Bin; Liao, Xiao-Zhou; Zou, Jin; Ringer, Simon Peter; Jagadish, Chennupati; Tan, Hark Hoe

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In situ deformation transmission electron microscopy was used to study the attraction behavior of GaAs semiconductor nanowires (NWs). The NWs demonstrated an interesting phenomenon of either head-to-head or body-to-body attraction at distances that depend

CollectionsANU Research Publications
Date published: 2013
Type: Journal article
URI: http://hdl.handle.net/1885/75179
Source: Acta Materialia
DOI: 10.1016/j.actamat.2013.08.020

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