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Attraction of semiconductor nanowires: An in situ observation

Chen, Bin; Gao, Qiang; Chang, Li; Wang, Yan-Bo; Chen, Zi-Bin; Liao, Xiao-Zhou; Zou, Jin; Ringer, Simon Peter; Jagadish, Chennupati; Tan, Hark Hoe

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In situ deformation transmission electron microscopy was used to study the attraction behavior of GaAs semiconductor nanowires (NWs). The NWs demonstrated an interesting phenomenon of either head-to-head or body-to-body attraction at distances that depend

dc.contributor.authorChen, Bin
dc.contributor.authorGao, Qiang
dc.contributor.authorChang, Li
dc.contributor.authorWang, Yan-Bo
dc.contributor.authorChen, Zi-Bin
dc.contributor.authorLiao, Xiao-Zhou
dc.contributor.authorZou, Jin
dc.contributor.authorRinger, Simon Peter
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorTan, Hark Hoe
dc.date.accessioned2015-12-13T22:31:17Z
dc.identifier.issn1359-6454
dc.identifier.urihttp://hdl.handle.net/1885/75179
dc.description.abstractIn situ deformation transmission electron microscopy was used to study the attraction behavior of GaAs semiconductor nanowires (NWs). The NWs demonstrated an interesting phenomenon of either head-to-head or body-to-body attraction at distances that depend
dc.description.sponsorshipWe thank Dr X.H. An for helpful discussions. The authors are grateful for the scientific and technical input and support from the Australian Microscopy and Microanalysis Research Facility node at the University of Sydney. Acknowledgment is also given to the Australian National Fabrication Facility for providing access to growth facilities used in this work. This research is financially supported by the Australian Research Council.
dc.publisherPergamon Press
dc.sourceActa Materialia
dc.subjectKeywords: Attraction; Diameter dependences; Electron-beam-induced current; Gaas nanowires; Gaas semiconductors; In-situ observations; Mechanistic modeling; Semiconductor nanowire; Gallium arsenide; Semiconducting gallium; Transmission electron microscopy; Nanowires Ampère force; Attraction; Diameter dependence; Electron-beam-induced current; GaAs nanowires
dc.titleAttraction of semiconductor nanowires: An in situ observation
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume61
dc.date.issued2013
local.identifier.absfor091203 - Compound Semiconductors
local.identifier.absfor100706 - Nanofabrication, Growth and Self Assembly
local.identifier.ariespublicationf5625xPUB4503
local.type.statusPublished Version
local.contributor.affiliationChen, Bin, University of Sydney
local.contributor.affiliationGao, Qiang, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationChang, Li, University of Sydney
local.contributor.affiliationWang, Yan-Bo, University of Sydney
local.contributor.affiliationChen, Zi-Bin, University of Sydney
local.contributor.affiliationLiao, Xiao-Zhou, University of Sydney
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationZou, Jin, University of Queensland
local.contributor.affiliationRinger, Simon Peter, University of Sydney
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.description.embargo2037-12-31
local.bibliographicCitation.issue19
local.bibliographicCitation.startpage7166
local.bibliographicCitation.lastpage7172
local.identifier.doi10.1016/j.actamat.2013.08.020
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
dc.date.updated2016-02-24T09:25:54Z
local.identifier.scopusID2-s2.0-84885644912
local.identifier.thomsonID000327683700011
CollectionsANU Research Publications

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