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Characterization of MAE-textured nanoporous silicon for solar cells application: Optics and surface passivation

Chong, Teck; Weber, Klaus; Booker, Katherine; Blakers, Andrew

Description

We present a three-step metal-assisted chemical etching (MAE) texturing technique to fabricate nanoporous Si (MAE nSi). The relationship between the resulting surface morphology, optical properties, and surface recombination of the MAE nSi are presented and analyzed. We also show that the solar weighted reflectance Rw of unencapsulated MAE nSi is less than 12% for all MAE nSi samples investigated in this paper. We show that the texture morphology has a near-isotropic surface reflectance for...[Show more]

dc.contributor.authorChong, Teck
dc.contributor.authorWeber, Klaus
dc.contributor.authorBooker, Katherine
dc.contributor.authorBlakers, Andrew
dc.date.accessioned2015-12-13T22:31:10Z
dc.identifier.issn2156-3381
dc.identifier.urihttp://hdl.handle.net/1885/75165
dc.description.abstractWe present a three-step metal-assisted chemical etching (MAE) texturing technique to fabricate nanoporous Si (MAE nSi). The relationship between the resulting surface morphology, optical properties, and surface recombination of the MAE nSi are presented and analyzed. We also show that the solar weighted reflectance Rw of unencapsulated MAE nSi is less than 12% for all MAE nSi samples investigated in this paper. We show that the texture morphology has a near-isotropic surface reflectance for nonnormal light incidence that is similar to the isotexture morphology. The angular distribution of the reflected light suggests that most of the losses due to the surface reflectance can be recovered after encapsulation, and this has been confirmed experimentally in this paper. Intriguingly, despite an approximately threefold increase in the surface area (compared with a planar sample), following texturing, the increase in the surface recombination velocity eff for samples passivated by atomic layer deposited Al2O3 is found to be relatively small. This suggests that for the ALD-Al2O3 passivation scheme, neither the local curvature nor the predominant crystallographic orientation causes additional recombination at the MAE nSi surface.
dc.publisherIEEE Electron Devices Society
dc.sourceIEEE Journal of Photovoltaics
dc.titleCharacterization of MAE-textured nanoporous silicon for solar cells application: Optics and surface passivation
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume4
dc.date.issued2014
local.identifier.absfor020501 - Classical and Physical Optics
local.identifier.ariespublicationU3488905xPUB4496
local.type.statusPublished Version
local.contributor.affiliationChong, Teck, College of Engineering and Computer Science, ANU
local.contributor.affiliationWeber, Klaus, College of Engineering and Computer Science, ANU
local.contributor.affiliationBooker, Katherine, College of Engineering and Computer Science, ANU
local.contributor.affiliationBlakers, Andrew, College of Engineering and Computer Science, ANU
local.description.embargo2037-12-31
local.bibliographicCitation.issue5
local.bibliographicCitation.startpage1235
local.bibliographicCitation.lastpage1242
local.identifier.doi10.1109/JPHOTOV.2014.2333871
local.identifier.absseo970109 - Expanding Knowledge in Engineering
dc.date.updated2015-12-11T08:59:14Z
local.identifier.scopusID2-s2.0-84906787514
local.identifier.thomsonID000344542500009
CollectionsANU Research Publications

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